Samsung Electronics reorganised its memory business, setting up a separate development arm to handle all research functions including high-bandwidth (HBM) chips, The Korea Herald reported.

The new unit will be led by Hwang Sang-joon, head of the DRAM product and technology group.

HBM development was previously a standalone unit.

The chipmaker has fallen behind SK Hynix over the past couple of years, winning approval in Q3 from Nvidia to produce the current generation of HBM chips (HBM3E). This was a year after its local rival. Micron started mass production for Nvidia in Q2.

In September, SK Hynix completed development of a next-generation HBM chip ahead of rivals, with the HBM4 ready for mass production.

Local media reported Samsung is about two months behind competitors in testing and is working to accelerate its timeline.

in 2024, the company issued an apology for delays in shipping new memory chips to support AI applications.

Data from TrendForce showed Samsung had a 32.6 per cent share of the global DRAM market in Q3, behind SK Hynix with a 33.2 per cent share, but ahead of US-based Micron with a 25.7 per cent share.

In May 2024, the Samsung replaced the head of its semiconductor business, the company’s largest division, appointing Jun Young‑hyun head of the Device Solutions division.

Jun is also chief of the memory business.